黄正峰,杨 潇,国欣祯,戚昊琛,鲁迎春,欧阳一鸣,倪天明,徐 奇.基于 C 单元的抗干扰低功耗双边沿触发器[J].电子测量与仪器学报,2020,34(12):85-93 |
基于 C 单元的抗干扰低功耗双边沿触发器 |
Anti-interference low-power double edge-triggered flip-flop based on C-elements |
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DOI: |
中文关键词: 双边沿触发器 毛刺 低功耗 C 单元 时钟树 |
英文关键词:double edge-triggered flip-flop glitch lower power C-element clock tree circuit |
基金项目:国家自然科学基金(61874156, 61874157, 61904001, 61904047)、安徽省自然科学基金(1908085QF272)资助项目 |
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中文摘要: |
快速增长的功耗是 VLSI 设计中的重要问题,特别是输入信号中存在毛刺,双边沿触发器的功耗将会显著增大。 为了有
效降低功耗,提出了一种基于 C 单元的抗干扰低功耗双边沿触发器 AILP-DET,结构采用快速的 C 单元,不仅能够阻塞输入信号
存在的毛刺,阻止触发器内部冗余跳变的发生,降低晶体管的充放电频率;而且增加了上拉-下拉路径,降低了其延迟。 相比现
有的双边沿触发器,AILP-DET 只在时钟边沿采样,有效降低了功耗。 通过 HSPICE 仿真,与 10 种双边沿触发器相比较, AILPDET 仅仅增加了 7. 58%的延迟开销,无输入毛刺情况下总功耗平均降低了 261. 28%,有输入毛刺情况下总功耗平均降低了
46. 97%。 详尽的电压温度波动分析表明,该双边沿触发器对电压、温度等波动不敏感。 |
英文摘要: |
One of the paramount issues in the field of VLSI design is the rapid increase in power consumption. When the input signal is
interfered and glitches occur, the power consumption of the double edge-triggered flip-flop (DETFF) will increase significantly. In order
to effectively reduce the power consumption, this paper proposed an anti-interference low-power double edge-triggered flip-flop based on
C-elements. The improved C-element is used in this DETFF. One side, it effectively blocks the glitches in the input signal, prevents
redundant transitions inside the DETFF, and reduces the charge and discharge frequency of the transistor. The C-element also adds pullup and pull-down paths, reducing its latency. Compared with other existing DETFFS, the DETFF proposed in this paper only flips once
on the clock edge, which effectively reduces power consumption. The HSPICE is used to simulate the proposed DETFF and the other 10
DETFFs, AILP-DET only increased the delay overhead by 7. 58%, the total power consumption is reduced by an average of 261. 28%
without input glitches, and the average power consumption is reduced by 46. 97% with input glitches. Detailed voltage and temperature
variations analysis indicate that the proposed DETFF features are less sensitive to voltage and temperature variations. |
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