王敏,王莹,陈凯,程玉华,邱根.绝缘栅双极型晶体管故障检测方法:综述与展望[J].电子测量与仪器学报,2024,38(8):1-14
绝缘栅双极型晶体管故障检测方法:综述与展望
Fault diagnostic of insulatedgate bipolar transistor: Overview and prospect
  
DOI:
中文关键词:  绝缘栅双极型晶体管  异常检测  故障诊断  可靠性
英文关键词:insulated gate bipolar transistor  anomaly detection  fault diagnosis  reliability
基金项目:国家自然科学基金(62303090,U2230206,U2330206)、博士后基金(2023M740516)、四川省自然科学基金(2024NSFSC1480)项目资助
作者单位
王敏 电子科技大学自动化工程学院成都611731 
王莹 电子科技大学(深圳)高等研究院深圳518000 
陈凯 电子科技大学自动化工程学院成都611731 
程玉华 电子科技大学自动化工程学院成都611731 
邱根 电子科技大学自动化工程学院成都611731 
AuthorInstitution
Wang Min School of Automation Engineering,University of Electronic Science and Technology of China, Chengdu 611731,China 
Wang Ying Shenzhen Institute for Advanced Study,University of Electronic Science and Technology of China, Shenzhen 518000,China 
Chen Kai School of Automation Engineering,University of Electronic Science and Technology of China, Chengdu 611731,China 
Cheng Yuhua School of Automation Engineering,University of Electronic Science and Technology of China, Chengdu 611731,China 
Qiu Gen School of Automation Engineering,University of Electronic Science and Technology of China, Chengdu 611731,China 
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中文摘要:
      绝缘栅双极型晶体管广泛应用于航空航天、武器装备、现代工业、交通运输和电力系统等领域。由于其工作环境复杂,IGBT 极易发生异常并导致系统故障,甚至引发重大的经济损失与人员伤亡。因此,IGBT 的故障检测引起了研究人员的广泛关注和高度重视。但是,目前针对 IGBT 故障检测技术的系统性综述较稀缺,阻碍了实际工程人员对其深层次的了解与认知。因此,该综述从方法的角度对 IGBT 故障检测相关研究成果进行了系统性的回顾:首先对 IGBT 的基本结构、工作原理以及常见失效机制进行了概述;其次,将 IGBT 故障检测技术基于检测方法的差异分为三大类,并总结了各类方法的优点与不足;最后,结合当前技术发展的现状,对 IGBT 故障检测领域的挑战与展望进行了深层次的剖析。
英文摘要:
      Insulate gate bipolar transistor (IGBT) is extensively utilized in aerospace, weapon systems, modern industry, transportation, and power systems. Due to the complex environment, IGBTs are highly susceptible anomalies, leading to system failures and significant economic losses as well as casualties. Consequently, IGBT fault detection has garnered widespread attention and significant focus from researchers. However, systematic reviews of fault detection techniques for IGBTs are scarce, hindering practical engineers' deep understanding and knowledge of this field. Therefore, this review provides a systematic overview of research achievements in IGBT fault detection from a methodological perspective. Firstly, an overview of the basic structure, operation principles, and common failure mechanisms of IGBTs is presented. Secondly, IGBT fault detection technologies are categorized into three major classes based on detection methods, with a summary of the advantages and limitations of each class. Finally, considering the current technological advancements, a deep analysis of challenges and prospects of the field of IGBT fault detection is provided.
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