| 路 远,周长祺,吴 昌,邹崇文.自激励二氧化钒薄膜及抗激光干扰红外热成像[J].电子测量与仪器学报,2023,37(2):179-185 |
| 自激励二氧化钒薄膜及抗激光干扰红外热成像 |
| Self-excited vanadium dioxide film and its prevention oflaser interference infrared thermal imaging |
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| DOI： |
| 中文关键词: 自激励二氧化钒薄膜 中红外激光 热像仪 干扰 防护 |
| 英文关键词:self-excited vanadium dioxide film mid-infrared laser thermal imager interference protect |
| 基金项目:安徽省自然科学基金(1908085MA13)、国防科技大学种子基金(KY22C301) 项目资助 |
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| Author | Institution |
| Lu Yuan | 1. Infrared and Low Temperature Plasma Key Laboratory of Anhui Province, College of Electronic Countermeasures, NUDT,2. State Key Laboratory of Pulsed Power Laser Technology, College of Electronic Countermeasures, NUDT,3. Advanced Laser Technology Laboratory of Anhui Province, College of Electronic Countermeasures, NUDT |
| Zhou Changqi | 1. Infrared and Low Temperature Plasma Key Laboratory of Anhui Province, College of Electronic Countermeasures, NUDT,2. State Key Laboratory of Pulsed Power Laser Technology, College of Electronic Countermeasures, NUDT,3. Advanced Laser Technology Laboratory of Anhui Province, College of Electronic Countermeasures, NUDT |
| Wu Chang | 1. Infrared and Low Temperature Plasma Key Laboratory of Anhui Province, College of Electronic Countermeasures, NUDT,2. State Key Laboratory of Pulsed Power Laser Technology, College of Electronic Countermeasures, NUDT,3. Advanced Laser Technology Laboratory of Anhui Province, College of Electronic Countermeasures, NUDT |
| Zou Chongwen | 4. National Synchrotron Radiation Laboratory,University of Science and Technology of China |
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| 中文摘要: |
| 激光干扰能够对热像仪产生饱和、眩光等干扰,对成像质量造成严重影响。 二氧化钒是一种相变材料,在低温半导体态
时,对红外辐射高透射,在高温金属态时,对红外辐射高反射。 该特性可以用于红外热像仪对激光干扰的防护。 利用分子束外
延法制备了自激励二氧化钒薄膜,搭建了实验装置测量了薄膜对中红外激光的透过率。 该薄膜在 3. 525 μm 波长上半导体态时
对激光的透过率为 0. 693,高温金属态时透过率为 0. 069。 利用该薄膜进行了二氧化钒薄膜防护中红外激光干扰热像仪的试
验。 实验结果表明,二氧化钒薄膜为半导体态时,入射激光能量大部分能够透射二氧化钒薄膜,从而对热像仪造成严重干扰;二
氧化钒薄膜为金属态时,入射激光能量绝大部分被衰减,激光对热像仪的干扰程度大幅度降低。 二氧化钒薄膜可以用于热像仪
对激光干扰的防护。 |
| 英文摘要: |
| Laser interference can cause interference such as saturation and glare to thermal imager, it seriously affects the image quality.
Vanadium dioxide is a phase change material, which has high transmission of infrared radiation at low temperature semiconductor state.
In the high temperature metallic state, vanadium dioxide has highly reflectance of infrared radiation. This characteristic can be used to
protect infrared thermal imager from laser interference. Self-motivated phase transition vanadium dioxide thin films were prepared by
molecular beam epitaxial method, and the transmittance of thin films to mid-infrared laser was measured by an experimental device. The
transmittance of the film in semiconductor state is 0. 693 and 0. 069 in metallic state at 3. 525 μm wavelength. An experiment using the
vanadium dioxide thin film to protect the thermal image from the middle infrared laser interfering was done. The experimental results
show that when the vanadium dioxide film is semiconductor state, most of the incident laser energy can transmit the vanadium dioxide
film, which will cause serious interference to the thermal imager. When vanadium dioxide film is in metallic state, most of the incident
laser energy is attenuated, and the interference degree of laser to the thermal imager is greatly reduced. Vanadium dioxide thin film can
be used to protect thermal imager from laser interference. |
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