王晨苑,何怡刚,王传坤,李 猎,李济源.高压多芯片并联 IGBT 模块故障监测方法[J].电子测量与仪器学报,2020,34(10):125-133 |
高压多芯片并联 IGBT 模块故障监测方法 |
Method for fault monitoring of high-voltage multi-chip parallel IGBT module |
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DOI: |
中文关键词: 高压多芯片 IGBT 模块 导通前电压 VGE(pre-on) IGBT 芯片故障 故障监测 |
英文关键词:high-voltage multichip insulated gate bipolar transistor ( IGBT) module pre-on voltage VGE(pre-on) IGBT chip failure fault monitoring |
基金项目:国家自然科学基金(51977153,51977161,51577046)、国家自然科学基金重点项目(51637004)、国家重点研发计划“重大科学仪器设备开发”项目(2016YFF0102200)、装备预先研究重点项目(41402040301)资助 |
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中文摘要: |
绝缘栅双极型晶体管( IGBT) 作为电力电子装置的关键核心器件,其高可靠性是系统长久稳定运行的重要保障,对
IGBT 模块进行故障监测是提高系统可靠性的有效方式之一。 提出一种新的健康敏感参数-栅极-发射极导通前电压 VGE(pre-on) ,
用于监测高压多芯片并联 IGBT 模块中的 IGBT 芯片故障。 首先,对现有故障监测方法进行比较,然后建立导通前电压可靠性
模型,再通过监测导通瞬态期间的 VGE(pre-on)来检测高压多芯片并联 IGBT 模块中的 IGBT 芯片故障。 为验证该方法的可行性,对
16 芯片 DIM800NSM33-F IGBT 模块进行了仿真,结果显示,在不同外部条件下,每个并联 IGBT 芯片故障所产生的导通前电压
VGE(pre-on)的平均偏移约为 900 mV,且具有较高的灵敏度和抗干扰能力,可有效监测 IGBT 模块芯片故障。 |
英文摘要: |
Insulated gate bipolar transistor ( IGBT) is a key component of power electronic devices. Its high reliability is an important
guarantee for long-term stable operation of the system. Fault monitoring of IGBT modules is one of the effective ways to improve system
reliability. Presents a new health-sensitive parameter, gate-emitter pre-on voltage VGE (pre-on) , for monitoring IGBT chip failures in highvoltage multi-chip parallel IGBT modules. First compare existing fault monitoring methods, then build a pre-threshold voltage reliability
model, and then detect the IGBT chip failure in the multi-chip high-voltage IGBT module by monitoring VGE (pre-on) during the gate-emitter
voltage turn-on transient. In order to verify the feasibility of this method, a 16-chip DIM800NSM33-F IGBT module was simulated. The
results show that under different external conditions, the average deviation of the pre-on voltage VGE (pre-on)
generated by each parallel
IGBT chip failure is about 900 mV, and has high sensitivity and anti-interference ability, which can effectively monitor the IGBT module
chip failure. |
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